1. Specifications: Voltage ratings of 650V, 750V, 1200V, 1700V, 2000V, and 3300V, with on-resistance ranging from 50 ohms to 11 milliohms, offering a comprehensive range. The driving voltage for 1st-generation products is 20V, while 2nd- and 3rd-generation products recommend 18V and are compatible with 15V driving voltage. 2. Features: The 1st to 3rd generation products all adopt planar gate MOSFET structures, featuring mature technology, high reliability, and continuously reduced specific on-resistance. The latest 3rd-generation product achieves an Rsp of 2.5mΩ·cm², reaching world-class standards. More importantly, the temperature coefficient of on-resistance leads internationally. 3. Packaging: Offers through-hole and surface-mount packages, including topside cooling TC3Pak, X2Pak, QDPak

Gate-driver IC are categorized into SiC-dedicated Nextdrive® chips and general-purpose driver chips. Among them, the Nextdrive® series is the industry's first 6-8 pin compact package, integrated features such as negative voltage drive, short-circuit protection, UVLO, fault alarm, and active-Miller clamp, offering both isolated and non-isolated variants. The isolated driver chips utilize capacitive isolation technology, boasting insulation ratings of 5kVrms and 3.75kVrms.